| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF644PBF-ND
|
DigiKey | MOSFET N-CH 250V 14A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
1165 In Stock |
|
$0.6971 / $1.6600 | Buy Now | |
|
DISTI #
70459395
|
RS | N-Chan 250V 14 Amp | Siliconix / Vishay IRF644PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
|
$2.4600 / $2.9000 | RFQ | |
| New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 3750 |
|
$0.6574 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
VISHAY SILICONIX
|
|
Part Package Code
|
TO-220AB
|
|
Package Description
|
ROHS COMPLIANT, TO-220, 3 PIN
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Vishay
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
550 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
250 V
|
|
Drain Current-Max (ID)
|
14 A
|
|
Drain-source On Resistance-Max
|
0.28 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
56 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP16N25E | 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | Rochester Electronics LLC | IRF644PBF vs MTP16N25E |
| IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF644PBF vs IRF644 |
| IRF644 | 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF644PBF vs IRF644 |
| BUZ255 | Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | IRF644PBF vs BUZ255 |
| IRF644PBF | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF644PBF vs IRF644PBF |
| IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF644PBF vs IRF644 |
| MTP16N25E | 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF644PBF vs MTP16N25E |
| IRF644 | 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF644PBF vs IRF644 |
| IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF644PBF vs IRF644 |
| STP16NB25 | 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRF644PBF vs STP16NB25 |
