Datasheets
IRF624SPBF by:

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IRF624SPBF by Vishay Intertechnologies

Overview of IRF624SPBF by Vishay Intertechnologies

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Price & Stock for IRF624SPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF624SPBF
Avnet Americas Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF624SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1662
  • 2,000 $1.1288
  • 4,000 $1.0914
  • 6,000 $1.0472
  • 8,000 $1.0132
  • 10,000 $0.9656
  • 100,000 $0.9180
$0.9180 / $1.1662 Buy Now
DISTI # 844-IRF624SPBF
Mouser Electronics MOSFET N-Chan 250V 4.4 Amp RoHS: Compliant 1515
  • 1 $1.4200
  • 10 $1.1500
  • 100 $0.9420
  • 500 $0.8500
$0.8500 / $1.4200 Buy Now
DISTI # 70079058
RS MOSFET POWER N-CHANNEL 1.1 OHMS (MAX.) @ DEGC 250 V (MIN.) @ DEGC | Vishay PCS IRF624SPBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk 0
  • 1,000 $1.0800
  • 10,000 $1.0300
  • 50,000 $0.9800
  • 100,000 $0.9200
$0.9200 / $1.0800 RFQ
Quest Components   80
  • 1 $4.0000
  • 9 $2.5000
  • 31 $1.5000
$1.5000 / $4.0000 Buy Now
DISTI # IRF624SPBF
TTI MOSFET N-Chan 250V 4.4 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $0.8500
$0.8500 Buy Now
DISTI # IRF624SPBF
TME Transistor: N-MOSFET, unipolar, 250V, 4.4A, Idm: 14A, 50W Min Qty: 1 0
  • 1 $0.8540
  • 10 $0.7690
  • 50 $0.6800
  • 250 $0.6100
  • 1,000 $0.5700
$0.5700 / $0.8540 RFQ
ComSIT USA POWER MOSFET Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Europe - 500
RFQ
Chip1Cloud MOSFET N-CH 250V 4.4A D2PAK 32500
RFQ
DISTI # IRF624SPBF
EBV Elektronik Trans MOSFET N-CH 250V 4.4A 3-Pin(2+Tab) D2PAK (Alt: IRF624SPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF624SPBF

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IRF624SPBF Part Data Attributes

IRF624SPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF624SPBF Vishay Intertechnologies Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code D2PAK
Package Description TO-263, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF624SPBF

This table gives cross-reference parts and alternative options found for IRF624SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF624SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF624S Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF624SPBF vs IRF624S
IRF624S Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF624SPBF vs IRF624S
IRF624STRR Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF624SPBF vs IRF624STRR
Part Number Description Manufacturer Compare
IRFW624A Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Samsung Semiconductor IRF624SPBF vs IRFW624A
IRF624S Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Intertechnologies IRF624SPBF vs IRF624S
FQB6N25TM Power Field-Effect Transistor, 5.5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRF624SPBF vs FQB6N25TM
IRF624STRR Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF624SPBF vs IRF624STRR
FQB4N25TM Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRF624SPBF vs FQB4N25TM
IRF624S Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRF624SPBF vs IRF624S
IRFW614A Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Samsung Semiconductor IRF624SPBF vs IRFW614A
FQB6N25TM 5.5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC IRF624SPBF vs FQB6N25TM
IRF624S Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF624SPBF vs IRF624S
FQB6N25 Power Field-Effect Transistor, 5.5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRF624SPBF vs FQB6N25

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