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Transistors / Power Field-Effect Transistors / IRF624PBF
Datasheets
IRF624PBF by:

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Details for IRF624PBF by Vishay Intertechnologies

Overview of IRF624PBF by Vishay Intertechnologies

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Price & Stock for IRF624PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7336
Newark N Channel Mosfet, 250V, 4.4A To-220, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:4.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:-, Msl:- Rohs Compliant: Yes |Vishay IRF624PBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IRF624PBF
Avnet Americas Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: IRF624PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9947
  • 2,000 $0.9628
  • 4,000 $0.9309
  • 6,000 $0.8932
  • 8,000 $0.8642
  • 10,000 $0.8236
  • 100,000 $0.7830
$0.7830 / $0.9947 Buy Now
DISTI # 844-IRF624PBF
Mouser Electronics MOSFET 250V N-CH HEXFET RoHS: Compliant 622
  • 1 $1.2800
  • 10 $0.8910
  • 100 $0.7600
  • 500 $0.6900
  • 1,000 $0.6830
$0.6830 / $1.2800 Buy Now
DISTI # 70078854
RS MOSFET, Power, N-Ch, VDSS 250V, RDS(ON) 1.1 Ohms, ID 4.4A, TO-220AB, PD 50W, VGS +/-20V | Vishay PCS IRF624PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk 0
  • 1,000 $1.2800
  • 10,000 $1.2200
  • 50,000 $1.1500
  • 100,000 $1.0900
$1.0900 / $1.2800 RFQ
Future Electronics Single N-Channel 250 V 1.1 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.7350
  • 200 $0.7050
  • 1,000 $0.6700
  • 2,000 $0.6550
  • 6,250 $0.6200
$0.6200 / $0.7350 Buy Now
Future Electronics Single N-Channel 250 V 1.1 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.7350
  • 200 $0.7050
  • 1,000 $0.6700
  • 2,000 $0.6550
  • 6,250 $0.6200
$0.6200 / $0.7350 Buy Now
DISTI # IRF624PBF
TTI MOSFET 250V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $0.6700
  • 2,000 $0.6600
  • 3,000 $0.6400
  • 5,000 $0.6300
$0.6300 / $0.6700 Buy Now
DISTI # IRF624PBF
Avnet Americas Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: IRF624PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9947
  • 2,000 $0.9628
  • 4,000 $0.9309
  • 6,000 $0.8932
  • 8,000 $0.8642
  • 10,000 $0.8236
  • 100,000 $0.7830
$0.7830 / $0.9947 Buy Now
DISTI # IRF624PBF
TME Transistor: N-MOSFET, unipolar, 250V, 4.4A, Idm: 14A, 50W, TO220AB Min Qty: 1 0
  • 1 $1.0880
  • 10 $0.7070
  • 50 $0.5600
  • 100 $0.5040
  • 250 $0.4670
  • 500 $0.4450
  • 1,000 $0.4430
$0.4430 / $1.0880 RFQ
DISTI # IRF624PBF
EBV Elektronik Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB (Alt: IRF624PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF624PBF

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IRF624PBF Part Data Attributes:

Parametric Data
IRF624PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF624PBF Vishay Intertechnologies Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF624PBF

This table gives cross-reference parts and alternative options found for IRF624PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF624PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF624PBF Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF624PBF vs IRF624PBF
IRF624 Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRF624PBF vs IRF624
IRF624 Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRF624PBF vs IRF624
IRF624 Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF624PBF vs IRF624
Part Number Description Manufacturer Compare
IRF624 Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF624PBF vs IRF624
IRF624 Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRF624PBF vs IRF624
IRF624 Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Vishay Intertechnologies IRF624PBF vs IRF624
IRF624 Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRF624PBF vs IRF624

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