International Rectifier |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$2.0000
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STMicroelectronics |
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
$2.0000
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Rochester Electronics LLC |
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Samsung Semiconductor |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB |
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TT Electronics Resistors |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Harris Semiconductor |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Advanced Microelectronic Products Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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General Electric Solid State |
Transistor |
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Diodes Incorporated |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB |
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Intersil Corporation |
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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TT Electronics Power and Hybrid / Semelab Limited |
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Texas Instruments |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB |
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Zetex / Diodes Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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