Manufacturer | Description | Price Range | Set Alert | Details |
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Harris Semiconductor | Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.3771 / $0.4436 |
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Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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International Rectifier | Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Rochester Electronics LLC | 2A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Intersil Corporation | 2A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Samsung Semiconductor | Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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