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Transistors Power Field-Effect Transistors IRF542

IRF542
Description: Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Overview of IRF542 by Harris Semiconductor

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Price & Stock for IRF542 by Harris Semiconductor

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-IRF542-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 188 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 7504
In Stock
  • 188 $1.6000
$1.6000 Buy Now
Rochester Electronics 25A, 100V, 0.100 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 7504
  • 1 $1.6200
  • 25 $1.5800
  • 100 $1.5200
  • 500 $1.4500
  • 1,000 $1.3700
$1.3700 / $1.6200 Buy Now

CAD Models for IRF542 by Harris Semiconductor
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Part Data Attributes for IRF542 by Harris Semiconductor
Parametric Data

IRF542
Harris Semiconductor
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
230 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
25 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
100 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
135 ns
Turn-on Time-Max (ton)
133 ns
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  1. IRF542
    Harris Semiconductor
    Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    VS

Alternate Parts for IRF542

This table gives cross-reference parts and alternative options found for IRF542. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF542, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF542 Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF542 vs IRF542
IRF540 23A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN NXP Semiconductors IRF542 vs IRF540
IRF540-009 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF542 vs IRF540-009
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Texas Instruments IRF542 vs IRF540
IRF542 Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF542 vs IRF542
RFP22N10 Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF542 vs RFP22N10
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF542 vs IRF540
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF542 vs IRF540
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF542 vs IRF540PBF
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF542 vs IRF540PBF
Part Number Description Manufacturer Compare
IRF542 Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF542 vs IRF542
IRF540 23A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN NXP Semiconductors IRF542 vs IRF540
STW70N10F4 N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in TO-247 STMicroelectronics IRF542 vs STW70N10F4
IRF543 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF542 vs IRF543
IRF541-010 Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF542 vs IRF541-010
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF542 vs IRF540
IRF542 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF542 vs IRF542
MTB33N10E 33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 onsemi IRF542 vs MTB33N10E
IRF540 27A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRF542 vs IRF540
IRF543 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF542 vs IRF543

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