Datasheets
IRF520SPBF by:

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for IRF520SPBF by Vishay Siliconix

Overview of IRF520SPBF by Vishay Siliconix

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Price & Stock for IRF520SPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF520SPBF-ND
DigiKey MOSFET N-CH 100V 9.2A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Tube 672
In Stock
  • 1 $1.9000
  • 50 $0.9128
  • 100 $0.8162
  • 500 $0.6467
  • 1,000 $0.5922
  • 2,000 $0.5464
  • 5,000 $0.4968
  • 10,000 $0.4900
$0.4900 / $1.9000 Buy Now
Bristol Electronics   1000
RFQ

Part Details for IRF520SPBF

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IRF520SPBF Part Data Attributes

IRF520SPBF Vishay Siliconix
Buy Now Datasheet
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IRF520SPBF Vishay Siliconix Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.2 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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