Datasheets
IRF520PBF by:

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Part Details for IRF520PBF by Vishay Intertechnologies

Overview of IRF520PBF by Vishay Intertechnologies

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Price & Stock for IRF520PBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2800
Newark Mosfet Transistor, N Channel, 9.2 A, 100 V, 270 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRF520PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1972
  • 1 $0.9820
  • 10 $0.9000
  • 25 $0.8540
  • 50 $0.8100
  • 100 $0.7650
  • 500 $0.7280
$0.7280 / $0.9820 Buy Now
DISTI # 63J7305
Newark N Channel Mosfet, 100V, 9.2A, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:9.2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Product Range:- Rohs Compliant: Yes |Vishay IRF520PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2489
  • 1 $0.9660
  • 10 $0.8840
  • 25 $0.8380
  • 50 $0.7950
  • 100 $0.7500
  • 500 $0.7120
$0.7120 / $0.9660 Buy Now
DISTI # 38AH0599
Newark Mosfet N-Channel 100V |Vishay IRF520PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.6700
  • 10 $1.3800
  • 25 $1.2800
  • 50 $1.1500
  • 100 $1.0300
  • 500 $0.9280
  • 1,000 $0.8160
  • 2,500 $0.7340
$0.7340 / $1.6700 Buy Now
DISTI # IRF520PBF
Avnet Americas Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF520PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Bulk 33535
  • 1 $0.5070
  • 10 $0.4949
  • 30 $0.4827
  • 50 $0.4554
  • 100 $0.4433
  • 250 $0.4311
  • 500 $0.4099
$0.4099 / $0.5070 Buy Now
DISTI # 844-IRF520PBF
Mouser Electronics MOSFET 100V N-CH HEXFET RoHS: Compliant 24560
  • 1 $0.9700
  • 10 $0.7580
  • 100 $0.6160
  • 500 $0.5220
  • 1,000 $0.4240
  • 2,000 $0.3990
  • 5,000 $0.3800
  • 10,000 $0.3630
$0.3630 / $0.9700 Buy Now
DISTI # 70079091
RS Siliconix N-channel MOSFET Transistor 9.2 A 100 V 3-Pin TO-220AB | Vishay PCS IRF520PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk 2749
  • 1 $0.5800
$0.5800 Buy Now
Future Electronics Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 472
Tube
  • 1 $0.4900
  • 100 $0.4700
  • 300 $0.4550
  • 1,250 $0.4350
  • 4,000 $0.4000
$0.4000 / $0.4900 Buy Now
Future Electronics Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 1 $0.4900
  • 100 $0.4700
  • 300 $0.4550
  • 1,250 $0.4350
  • 4,000 $0.4000
$0.4000 / $0.4900 Buy Now
Bristol Electronics   584
RFQ
DISTI # IRF520PBF
TTI MOSFET 100V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 2400
In Stock
  • 50 $0.6070
  • 100 $0.5960
  • 300 $0.5840
  • 500 $0.4580
  • 1,000 $0.4490
  • 5,000 $0.4400
$0.4400 / $0.6070 Buy Now
DISTI # IRF520PBF
TME Transistor: N-MOSFET, unipolar, 100V, 6.5A, 60W, TO220AB Min Qty: 1 2999
  • 1 $0.9850
  • 3 $0.5360
  • 10 $0.4770
  • 50 $0.4260
  • 250 $0.3970
$0.3970 / $0.9850 Buy Now
DISTI # IRF520PBF
EBV Elektronik Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB (Alt: IRF520PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 7100
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 5700
  • 250 $0.8418
  • 5,700 $0.7833
$0.7833 / $0.8418 Buy Now

Part Details for IRF520PBF

IRF520PBF CAD Models

IRF520PBF Part Data Attributes:

IRF520PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF520PBF Vishay Intertechnologies Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.2 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF520PBF

This table gives cross-reference parts and alternative options found for IRF520PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF520PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 Microsemi Corporation IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF520PBF vs IRF520
IRF520 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF520PBF vs IRF520
IRF520 10A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRF520PBF vs IRF520
IRF520 8A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF520PBF vs IRF520
Part Number Description Manufacturer Compare
IRF520 8A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF520PBF vs IRF520
IRF520 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF520PBF vs IRF520
IRF520 10A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 Microsemi Corporation IRF520PBF vs IRF520
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation IRF520PBF vs IRF520

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