-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRF520NPBF by Infineon Technologies AG
Overview of IRF520NPBF by Infineon Technologies AG
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF520NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
19K8210
|
Newark | N Channel Mosfet, 100V, 9.7A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:9.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF520NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 88478 |
|
$0.2590 / $1.0800 | Buy Now |
|
DISTI #
IRF520NPBF-ND
|
DigiKey | MOSFET N-CH 100V 9.7A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
545 In Stock |
|
$0.3449 / $1.4400 | Buy Now |
|
DISTI #
IRF520NPBF
|
Avnet Americas | Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF520NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 1727 |
|
RFQ | |
|
DISTI #
IRF520NPBF
|
Avnet Americas | Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF520NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 357 Partner Stock |
|
RFQ | |
|
DISTI #
19K8210
|
Avnet Americas | Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 19K8210) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 79 Partner Stock |
|
$0.4040 / $0.7950 | Buy Now |
|
DISTI #
942-IRF520NPBF
|
Mouser Electronics | MOSFETs MOSFT 100V 9.7A 200mOhm 16.7nC RoHS: Compliant | 2528 |
|
$0.3440 / $0.5400 | Buy Now |
|
DISTI #
E02:0323_00176180
|
Arrow Electronics | Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2430 | Europe - 10943 |
|
$0.2169 / $0.4882 | Buy Now |
|
DISTI #
V36:1790_13889901
|
Arrow Electronics | Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2426 | Americas - 1979 |
|
$0.2754 / $0.6004 | Buy Now |
|
DISTI #
V99:2348_13889901
|
Arrow Electronics | Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2202 | Americas - 18 |
|
$0.2888 / $0.4265 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Tube | 9250Tube |
|
$0.3400 / $0.4050 | Buy Now |
Part Details for IRF520NPBF
IRF520NPBF CAD Models
IRF520NPBF Part Data Attributes
|
|
IRF520NPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF520NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 91 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 9.7 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 47 W | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF520NPBF
This table gives cross-reference parts and alternative options found for IRF520NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF520NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF520NPBF vs IRF530 |
| IRF531 | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF520NPBF vs IRF531 |
| IRF533 | 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF520NPBF vs IRF533 |
| MTP12N10E | 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | onsemi | IRF520NPBF vs MTP12N10E |
| IRF532 | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF520NPBF vs IRF532 |
| IRF533 | 12A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF520NPBF vs IRF533 |
| IRF531 | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF520NPBF vs IRF531 |
| BUZ20 | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF520NPBF vs BUZ20 |
| IRF532 | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF520NPBF vs IRF532 |
| IRF520N | 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF520NPBF vs IRF520N |