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Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K2086
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Newark | Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:59A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF3710ZPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 503 |
|
$0.6750 / $1.3800 | Buy Now |
DISTI #
IRF3710ZPBF-ND
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DigiKey | MOSFET N-CH 100V 59A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
3316 In Stock |
|
$0.6059 / $2.1700 | Buy Now |
DISTI #
IRF3710ZPBF
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Avnet Americas | Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3710ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
DISTI #
942-IRF3710ZPBF
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Mouser Electronics | MOSFETs MOSFT 100V 59A 18mOhm 82nC Qg RoHS: Compliant | 2121 |
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$0.6050 / $1.6100 | Buy Now |
DISTI #
E02:0323_00177166
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Arrow Electronics | Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2329 | Europe - 992 |
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$0.4850 / $1.0955 | Buy Now |
DISTI #
V36:1790_13890180
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Arrow Electronics | Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2330 | Americas - 417 |
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$0.4944 / $1.3671 | Buy Now |
DISTI #
70016957
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 14 Milliohms, ID 59A, TO-220AB, PD 160W,-55C | Infineon IRF3710ZPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$1.1700 / $1.3700 | RFQ |
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Future Electronics | Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 450Tube |
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$0.5950 / $0.7100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Container: Tube | 50Tube |
|
$0.5950 / $0.7300 | Buy Now |
DISTI #
81022982
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Verical | Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 Date Code: 2330 | Americas - 29000 |
|
$0.6504 | Buy Now |
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IRF3710ZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3710ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 59 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF3710ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF3710Z | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF3710ZPBF vs IRF3710Z |
AUIRF3710Z | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRF3710ZPBF vs AUIRF3710Z |