Datasheets
IRF3709ZSTRRPBF by:

Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

Part Details for IRF3709ZSTRRPBF by Infineon Technologies AG

Overview of IRF3709ZSTRRPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF3709ZSTRRPBF

Part # Distributor Description Stock Price Buy
DISTI # 448-IRF3709ZSTRRPBFCT-ND
DigiKey MOSFET N-CH 30V 87A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 824
In Stock
  • 1 $2.3300
  • 10 $1.4980
  • 100 $1.0218
  • 800 $0.7720
  • 1,600 $0.7136
  • 2,400 $0.6837
  • 4,000 $0.6699
$0.6699 / $2.3300 Buy Now
DISTI # IRF3709ZSTRRPBF
Avnet Americas Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3709ZSTRRPBF) RoHS: Compliant Min Qty: 3200 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-IRF3709ZSTRRPBF
Mouser Electronics MOSFETs MOSFT 30V 87A 6.3mOhm 17nC Qg RoHS: Compliant 7859
  • 1 $1.6000
  • 10 $1.3300
  • 100 $1.0600
  • 250 $1.0200
  • 500 $0.9610
  • 800 $0.7470
  • 2,400 $0.7350
  • 4,800 $0.7070
$0.7070 / $1.6000 Buy Now
Future Electronics Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 3200 Package Multiple: 800 Lead time: 12 Weeks Container: Reel 0
Reel
  • 800 $0.7100
  • 1,600 $0.6950
  • 2,400 $0.6850
  • 3,200 $0.6800
  • 4,000 $0.6550
$0.6550 / $0.7100 Buy Now
Future Electronics Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 3200 Package Multiple: 800 Lead time: 12 Weeks Container: Reel 0
Reel
  • 800 $0.7100
  • 1,600 $0.6950
  • 2,400 $0.6850
  • 3,200 $0.6800
  • 4,000 $0.6550
$0.6550 / $0.7100 Buy Now
DISTI # 75724083
Verical Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R Min Qty: 24 Package Multiple: 1 Date Code: 2232 Americas - 1600
  • 24 $1.3250
  • 50 $1.2488
  • 100 $1.0213
  • 200 $0.9738
  • 500 $0.9600
  • 1,000 $0.8613
$0.8613 / $1.3250 Buy Now
Rochester Electronics IRF3709ZSTRRPBF - TRENCH <= 40V RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 2400
  • 1 $0.7815
  • 25 $0.7659
  • 100 $0.7346
  • 500 $0.7033
  • 1,000 $0.6643
$0.6643 / $0.7815 Buy Now
DISTI # C1S322000705496
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 1600
  • 1 $1.2800
  • 10 $1.0600
  • 50 $0.9990
  • 100 $0.8170
  • 200 $0.7790
  • 500 $0.7680
  • 1,000 $0.6890
$0.6890 / $1.2800 Buy Now
DISTI # SP001563134
EBV Elektronik Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001563134) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF3709ZSTRRPBF

IRF3709ZSTRRPBF CAD Models

IRF3709ZSTRRPBF Part Data Attributes

IRF3709ZSTRRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF3709ZSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.0063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 350 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3709ZSTRRPBF

This table gives cross-reference parts and alternative options found for IRF3709ZSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3709ZSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3709ZSPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 International Rectifier IRF3709ZSTRRPBF vs IRF3709ZSPBF
IRF3709ZS Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG IRF3709ZSTRRPBF vs IRF3709ZS
IRF3709ZSTRLPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 International Rectifier IRF3709ZSTRRPBF vs IRF3709ZSTRLPBF
Part Number Description Manufacturer Compare
IRF3709ZSTRLPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 International Rectifier IRF3709ZSTRRPBF vs IRF3709ZSTRLPBF
IRF3709ZS Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG IRF3709ZSTRRPBF vs IRF3709ZS
IRF3709ZSPBF Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 International Rectifier IRF3709ZSTRRPBF vs IRF3709ZSPBF

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