Datasheets
IRF320 by:

3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for IRF320 by Rochester Electronics LLC

Overview of IRF320 by Rochester Electronics LLC

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Part Details for IRF320

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IRF320 Part Data Attributes:

IRF320 Rochester Electronics LLC
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IRF320 Rochester Electronics LLC 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 3.3 A
Drain-source On Resistance-Max 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 13 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IRF320

This table gives cross-reference parts and alternative options found for IRF320. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF320, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF320 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,3.3A I(D),TO-204AA Intersil Corporation IRF320 vs IRF320
IRF320 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF320 vs IRF320
IRF320 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF320 vs IRF320
Part Number Description Manufacturer Compare
BUP62R1 Power Field-Effect Transistor, 6.8A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF320 vs BUP62R1
BUP61R1 5.56A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF320 vs BUP61R1
IRF322 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF320 vs IRF322
2N6760TX Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation IRF320 vs 2N6760TX
IRF332 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA Intersil Corporation IRF320 vs IRF332
IRF320 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,3.3A I(D),TO-204AA Intersil Corporation IRF320 vs IRF320
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF320 vs JANTX2N6760
BUP69R1 7.93A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF320 vs BUP69R1
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF320 vs 2N6760
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF320 vs IRF332

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