Datasheets
IRF241 by:

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN

Part Details for IRF241 by Rochester Electronics LLC

Overview of IRF241 by Rochester Electronics LLC

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Part Details for IRF241

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IRF241 Part Data Attributes:

IRF241 Rochester Electronics LLC
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IRF241 Rochester Electronics LLC 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-240AE
Package Description TO-204AE, 2 PIN
Pin Count 2
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF241

This table gives cross-reference parts and alternative options found for IRF241. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF241, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF243 Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier IRF241 vs IRF243
IRF240PBF Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF241 vs IRF240PBF
IRF242 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF241 vs IRF242
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF241 vs IRF240
IRF243 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF241 vs IRF243
Part Number Description Manufacturer Compare
IRF243 Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Harris Semiconductor IRF241 vs IRF243
UFN242 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF241 vs UFN242
IRF242 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF241 vs IRF242
IRF245 Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF241 vs IRF245
IRF245 13A, 250V, 0.34ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF241 vs IRF245
IRF240PBF Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF241 vs IRF240PBF
IRF241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, Vishay Siliconix IRF241 vs IRF241
IRF244 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF241 vs IRF244
IRF241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Motorola Semiconductor Products IRF241 vs IRF241
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF241 vs IRF240

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