| Manufacturer | Description | Price Range | Set Alert | Details |
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| Harris Semiconductor | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $1.7100 / $21.0000 |
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| Infineon Technologies AG | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | $25.2000 / $32.1300 |
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| New Jersey Semiconductor Products, Inc. | $8.1937 / $14.2500 |
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| International Rectifier | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $9.0000 |
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| New Jersey Semiconductor Products Inc | Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA | $9.9750 / $19.0000 |
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| FCI Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments | IRF120 |
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| Rochester Electronics LLC | 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| National Semiconductor Corporation | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-204AA |
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| General Electric Solid State | Transistor |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Intersil Corporation | 9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| Samsung Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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