Datasheets
IPW60R125CPFKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IPW60R125CPFKSA1 by Infineon Technologies AG

Overview of IPW60R125CPFKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for IPW60R125CPFKSA1

Part # Distributor Description Stock Price Buy
DISTI # 47W3484
Newark Mosfet, N Channel, 650V, 25A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:25A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon IPW60R125CPFKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $6.9200
  • 10 $5.9300
  • 25 $5.3800
  • 60 $5.1600
  • 120 $4.9400
  • 270 $4.6400
  • 510 $4.3500
$4.3500 / $6.9200 Buy Now
DISTI # 448-IPW60R125CPFKSA1-ND
DigiKey MOSFET N-CH 600V 25A TO247-3 Min Qty: 240 Lead time: 15 Weeks Container: Tube Limited Supply - Call
  • 240 $3.1235
$3.1235 Buy Now
DISTI # IPW60R125CPFKSA1
Avnet Americas Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R125CPFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IPW60R125CPFKSA1
Mouser Electronics MOSFETs N-Ch 650V 25A TO247-3 CoolMOS CP RoHS: Compliant 0
Order Now
DISTI # E02:0323_00040415
Arrow Electronics Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2252 Europe - 450
  • 1 $3.1846
  • 240 $2.5847
$2.5847 / $3.1846 Buy Now
Future Electronics Single N-Channel 600 V 125 mOhm 53 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 0
Tube
  • 30 $3.0500
  • 480 $3.0000
  • 720 $2.9700
  • 960 $2.9500
  • 1,200 $2.8900
$2.8900 / $3.0500 Buy Now
DISTI # 67597005
Verical Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2252 Americas - 450
  • 3 $3.2469
  • 240 $2.6352
$2.6352 / $3.2469 Buy Now
Rochester Electronics IPW60R125 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 235
  • 1 $3.3200
  • 25 $3.2500
  • 100 $3.1200
  • 500 $2.9900
  • 1,000 $2.8200
$2.8200 / $3.3200 Buy Now
DISTI # IPW60R125CPFKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 25A, 208W, PG-TO247-3 Min Qty: 1 0
  • 1 $6.9600
  • 10 $5.0400
  • 30 $4.6700
  • 60 $4.4400
  • 150 $4.1400
$4.1400 / $6.9600 RFQ
DISTI # SP000088489
EBV Elektronik Power MOSFET, N Channel, 650 V, 25 A, 0.11 ohm, TO-247, Through Hole (Alt: SP000088489) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPW60R125CPFKSA1

IPW60R125CPFKSA1 CAD Models

IPW60R125CPFKSA1 Part Data Attributes

IPW60R125CPFKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW60R125CPFKSA1 Infineon Technologies AG Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 708 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 82 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPW60R125CPFKSA1

This table gives cross-reference parts and alternative options found for IPW60R125CPFKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R125CPFKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FCP25N60N_F02 Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation IPW60R125CPFKSA1 vs FCP25N60N_F02
IPP60R125CP Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPW60R125CPFKSA1 vs IPP60R125CP
IPI60R125CP Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPW60R125CPFKSA1 vs IPI60R125CP

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