There are no models available for this part yet.
Overview of IPP65R190CFDAAKSA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 2 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPP65R190CFDAAKSA1 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
SP000928266
|
EBV Elektronik | MOS Power Transistors HV (>= 200V) (Alt: SP000928266) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for IPP65R190CFDAAKSA1 by Infineon Technologies AG
Part Data Attributes for IPP65R190CFDAAKSA1 by Infineon Technologies AG
|
|
|
|---|---|
|
Pbfree Code
|
No
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
TO-220AB
|
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Infineon
|
|
Additional Feature
|
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas)
|
484 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
650 V
|
|
Drain Current-Max (ID)
|
17.5 A
|
|
Drain-source On Resistance-Max
|
0.19 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
151 W
|
|
Pulsed Drain Current-Max (IDM)
|
57.2 A
|
|
Reference Standard
|
AEC-Q101
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IPP65R190CFDAAKSA1
This table gives cross-reference parts and alternative options found for IPP65R190CFDAAKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R190CFDAAKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP65R190CFD | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP65R190CFDAAKSA1 vs IPP65R190CFD |
| IPP65R190CFDXKSA2 | Power Field-Effect Transistor, TO-220, 3 PIN | Infineon Technologies AG | IPP65R190CFDAAKSA1 vs IPP65R190CFDXKSA2 |
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