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Transistors Power Field-Effect Transistors IPP076N15N5AKSA1

IPP076N15N5AKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 112A I(D), 150V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IPP076N15N5AKSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 11 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for IPP076N15N5AKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 45AC7167
Newark Mosfet, N-Ch, 150V, 112A, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:112A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.0059Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.8V, Power Rohs Compliant: Yes |Infineon IPP076N15N5AKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 21
  • 1 $5.4100
  • 10 $4.5900
  • 25 $4.5800
  • 50 $4.1900
  • 100 $3.8000
  • 250 $3.6000
  • 500 $3.4000
$3.4000 / $5.4100 Buy Now
DISTI # 448-IPP076N15N5AKSA1-ND
DigiKey MOSFET N-CH 150V 112A TO220-3 Min Qty: 1 Lead time: 26 Weeks Container: Tube 366
In Stock
  • 1 $5.0700
  • 50 $2.6478
  • 100 $2.4128
$2.4128 / $5.0700 Buy Now
DISTI # IPP076N15N5AKSA1
Avnet Americas Trans MOSFET N 150V 112A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP076N15N5AKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 26 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IPP076N15N5AKSA1
Mouser Electronics MOSFETs N RoHS: Compliant 2449
  • 1 $4.3100
  • 10 $3.8000
  • 25 $2.6500
  • 100 $2.4200
  • 500 $2.4100
  • 1,000 $2.2200
$2.2200 / $4.3100 Buy Now
Future Electronics Trans MOSFET N 150V 112A 3-Pin 0.0076 OHM PG-TO220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 26 Weeks Container: Tube 500
Tube
  • 50 $2.2200
  • 1,000 $2.1900
  • 1,500 $2.1700
  • 2,000 $2.1500
  • 2,500 $2.1100
$2.1100 / $2.2200 Buy Now
Future Electronics Trans MOSFET N 150V 112A 3-Pin 0.0076 OHM PG-TO220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 26 Weeks Container: Tube 0
Tube
  • 50 $2.1900
  • 1,000 $2.1600
  • 1,500 $2.1400
  • 2,000 $2.1100
$2.1100 / $2.1900 Buy Now
DISTI # IPP076N15N5
TME Transistor: N-MOSFET, unipolar, 150V, 79A, 214W, PG-TO220-3 Min Qty: 1 64
  • 1 $4.2700
  • 10 $3.7600
  • 50 $3.2900
  • 100 $3.0900
  • 500 $2.6300
  • 1,000 $2.5600
$2.5600 / $4.2700 Buy Now
DISTI # C1S322000660591
Chip1Stop Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant 1783
  • 1 $4.5800
  • 10 $3.8200
  • 25 $3.2100
  • 50 $2.3100
  • 250 $2.3000
  • 500 $2.0600
  • 1,000 $2.0300
$2.0300 / $4.5800 Buy Now
DISTI # C1S322000653689
Chip1Stop Trans MOSFET N-CH 150V 112A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Container: Tube 522
  • 1 $2.2700
  • 50 $2.2300
  • 500 $2.2200
$2.2200 / $2.2700 Buy Now
DISTI # SP001180658
EBV Elektronik Trans MOSFET N 150V 112A 3-Pin TO-220 Tube (Alt: SP001180658) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 150V 112A TO220-3 / N-Channel 150 V 112A (Tc) 214W (Tc) Through Hole PG-TO220-3 63883
  • 17 $3.1090
  • 40 $2.5510
  • 61 $2.4710
  • 84 $2.3920
  • 109 $2.3120
  • 145 $2.0730
$2.0730 / $3.1090 Buy Now

CAD Models for IPP076N15N5AKSA1 by Infineon Technologies AG
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Part Data Attributes for IPP076N15N5AKSA1 by Infineon Technologies AG
Parametric Data

IPP076N15N5AKSA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
26 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
130 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
112 A
Drain-source On Resistance-Max
0.0076 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
448 A
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IPP076N15N5AKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 112A I(D), 150V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

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