|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
TO-262AA
|
|
Package Description
|
GREEN, PLASTIC, TO-262, 3 PIN
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
166 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
600 V
|
|
Drain Current-Max (ID)
|
6.8 A
|
|
Drain-source On Resistance-Max
|
0.52 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-262AA
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
66 W
|
|
Pulsed Drain Current-Max (IDM)
|
17 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPI07N65C3XKSA1 | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | IPI60R520CP vs SPI07N65C3XKSA1 |
| IPI60R600CP | Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPI60R520CP vs IPI60R600CP |
| IPI65R600C6 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPI60R520CP vs IPI65R600C6 |
| IPI60R600CPAKSA1 | Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPI60R520CP vs IPI60R600CPAKSA1 |
| IPI65R600C6XKSA1 | Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPI60R520CP vs IPI65R600C6XKSA1 |
