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Transistors / Power Field-Effect Transistors / IPI60R190C6XKSA1
Datasheets
IPI60R190C6XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Part Details for IPI60R190C6XKSA1 by Infineon Technologies AG

Overview of IPI60R190C6XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPI60R190C6XKSA1

Part # Distributor Description Stock Price Buy
DISTI # IPI60R190C6XKSA1-ND
DigiKey MOSFET N-CH 600V 20.2A TO262-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 495
In Stock
  • 1 $3.1200
  • 10 $2.0490
  • 100 $1.4385
  • 500 $1.3111
$1.3111 / $3.1200 Buy Now
DISTI # IPI60R190C6XKSA1
Avnet Americas Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R190C6XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # E02:0323_00822766
Arrow Electronics Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2431 Europe - 350
  • 1 $3.0801
  • 10 $2.0219
  • 100 $1.4129
  • 500 $1.3194
$1.3194 / $3.0801 Buy Now
Future Electronics CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $1.4200
  • 200 $1.3800
  • 500 $1.3600
  • 1,250 $1.3300
  • 2,000 $1.2900
$1.2900 / $1.4200 Buy Now
Future Electronics CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $1.4200
  • 200 $1.3800
  • 500 $1.3600
  • 1,250 $1.3300
  • 2,000 $1.2900
$1.2900 / $1.4200 Buy Now
DISTI # 84376380
Verical Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2431 Americas - 348
  • 4 $3.1403
  • 10 $2.0614
  • 100 $1.4405
  • 500 $1.3452
$1.3452 / $3.1403 Buy Now
Rochester Electronics IPI60R190 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 311
  • 1 $1.4600
  • 25 $1.4300
  • 100 $1.3700
  • 500 $1.3100
  • 1,000 $1.2400
$1.2400 / $1.4600 Buy Now
DISTI # IPI60R190C6XKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 20.2A, 151W, PG-TO262-3 Min Qty: 1 18
  • 1 $3.7200
  • 3 $3.1900
  • 10 $2.5700
  • 100 $2.2300
$2.2300 / $3.7200 Buy Now
DISTI # SP000660618
EBV Elektronik Transistor MOSFET N-Channel 600V 20.2A 3-Pin TO-262 Tube (Alt: SP000660618) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPI60R190C6XKSA1

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IPI60R190C6XKSA1 Part Data Attributes

Parametric Data
IPI60R190C6XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPI60R190C6XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 418 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.2 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 59 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPI60R190C6XKSA1

This table gives cross-reference parts and alternative options found for IPI60R190C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI60R190C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHP21N65EF-GE3 Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHP21N65EF-GE3
IPA60R160P6 Power Field-Effect Transistor, Infineon Technologies AG IPI60R190C6XKSA1 vs IPA60R160P6
SIHB22N65E-GE3 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHB22N65E-GE3
APT20N60BCF Power Field-Effect Transistor, 20A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation IPI60R190C6XKSA1 vs APT20N60BCF
SIHP22N60E-E3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHP22N60E-E3
SPP20N65C3HKSA1 Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPI60R190C6XKSA1 vs SPP20N65C3HKSA1
SPP20N60C3 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IPI60R190C6XKSA1 vs SPP20N60C3
SIHP22N60S-E3 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHP22N60S-E3
IPW60R190C6XK Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPI60R190C6XKSA1 vs IPW60R190C6XK
SIHG22N60EL-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHG22N60EL-GE3

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