Part Details for IPI60R190C6XKSA1 by Infineon Technologies AG
Overview of IPI60R190C6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPI60R190C6XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPI60R190C6XKSA1-ND
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DigiKey | MOSFET N-CH 600V 20.2A TO262-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
495 In Stock |
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$1.3111 / $3.1200 | Buy Now |
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DISTI #
IPI60R190C6XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R190C6XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
E02:0323_00822766
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Arrow Electronics | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2431 | Europe - 350 |
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$1.3114 / $3.0614 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$1.2900 / $1.4200 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$1.2900 / $1.4200 | Buy Now |
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DISTI #
85992669
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Verical | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 219 Package Multiple: 1 Date Code: 2001 | Americas - 500 |
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$1.5500 / $1.7125 | Buy Now |
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DISTI #
85992294
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Verical | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 219 Package Multiple: 1 Date Code: 2201 | Americas - 400 |
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$1.5500 / $1.7125 | Buy Now |
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DISTI #
84376380
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Verical | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2431 | Americas - 350 |
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$1.3452 / $3.1403 | Buy Now |
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DISTI #
85992829
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Verical | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 219 Package Multiple: 1 Date Code: 1801 | Americas - 311 |
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$1.5500 / $1.7125 | Buy Now |
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Rochester Electronics | IPI60R190 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 900 |
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$1.2400 / $1.4600 | Buy Now |
Part Details for IPI60R190C6XKSA1
IPI60R190C6XKSA1 CAD Models
IPI60R190C6XKSA1 Part Data Attributes
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IPI60R190C6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPI60R190C6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 418 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.2 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 59 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPI60R190C6XKSA1
This table gives cross-reference parts and alternative options found for IPI60R190C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI60R190C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPP20N65C3XKSA1 | Infineon Technologies AG | $3.7430 | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPI60R190C6XKSA1 vs SPP20N65C3XKSA1 |
| SPP20N65C3HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPI60R190C6XKSA1 vs SPP20N65C3HKSA1 |
| SIHP22N60E-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | IPI60R190C6XKSA1 vs SIHP22N60E-E3 |
| SPI20N60C3HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | IPI60R190C6XKSA1 vs SPI20N60C3HKSA1 |
| STI24NM65N | STMicroelectronics | Check for Price | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | IPI60R190C6XKSA1 vs STI24NM65N |
| SIHP22N65E-GE3 | Vishay Intertechnologies | $2.9507 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | IPI60R190C6XKSA1 vs SIHP22N65E-GE3 |
| SIHG22N60EL-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | IPI60R190C6XKSA1 vs SIHG22N60EL-GE3 |
| SIHG21N65EF-GE3 | Vishay Intertechnologies | $4.2243 | Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | IPI60R190C6XKSA1 vs SIHG21N65EF-GE3 |
| IPA60R160P6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IPI60R190C6XKSA1 vs IPA60R160P6 |
| SPW24N60CFDXK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IPI60R190C6XKSA1 vs SPW24N60CFDXK |