Part Details for IPF05N03LAG by Infineon Technologies AG
Overview of IPF05N03LAG by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPF05N03LAG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPF05N03LAG-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 547 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
22500 In Stock |
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$0.5500 | Buy Now |
DISTI #
86114440
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Verical | Trans MOSFET N-CH 25V 50A 4-Pin(3+Tab) DPAK Min Qty: 632 Package Multiple: 1 Date Code: 0601 | Americas - 22500 |
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$0.5608 / $0.5938 | Buy Now |
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Bristol Electronics | 49835 |
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RFQ | ||
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Rochester Electronics | IPF05N03 - Power Field-Effect Transistor, 50A, 25V, 0.0084ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 24746 |
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$0.4486 / $0.5278 | Buy Now |
Part Details for IPF05N03LAG
IPF05N03LAG CAD Models
IPF05N03LAG Part Data Attributes
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IPF05N03LAG
Infineon Technologies AG
Buy Now
Datasheet
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IPF05N03LAG
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 25V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G3 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0084 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 350 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |