Datasheets
IPF05N03LAG by:

Power Field-Effect Transistor, 50A I(D), 25V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN

Part Details for IPF05N03LAG by Infineon Technologies AG

Overview of IPF05N03LAG by Infineon Technologies AG

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Price & Stock for IPF05N03LAG

Part # Distributor Description Stock Price Buy
DISTI # 2156-IPF05N03LAG-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 547 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 22500
In Stock
  • 547 $0.5500
$0.5500 Buy Now
DISTI # 86114440
Verical Trans MOSFET N-CH 25V 50A 4-Pin(3+Tab) DPAK Min Qty: 632 Package Multiple: 1 Date Code: 0601 Americas - 22500
  • 632 $0.5938
  • 1,000 $0.5608
$0.5608 / $0.5938 Buy Now
Bristol Electronics   49835
RFQ
Rochester Electronics IPF05N03 - Power Field-Effect Transistor, 50A, 25V, 0.0084ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 24746
  • 1 $0.5278
  • 25 $0.5172
  • 100 $0.4961
  • 500 $0.4750
  • 1,000 $0.4486
$0.4486 / $0.5278 Buy Now

Part Details for IPF05N03LAG

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IPF05N03LAG Part Data Attributes

IPF05N03LAG Infineon Technologies AG
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IPF05N03LAG Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 25V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 350 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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