Transistors
IPD60R600CP
Infineon Technologies AG
Description: Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Overview of IPD60R600CP by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IPD60R600CP by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-IPD60R600CP-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 452 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 4945
In Stock
  • 452 $0.6600
$0.6600 Buy Now
DISTI # IPD60R600CP
Avnet Americas Trans MOSFET N-CH 600V 6.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600CP) RoHS: Compliant Min Qty: 544 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 5000 Partner Stock
  • 1 $0.6708
  • 25 $0.6261
  • 25 $0.6574
  • 100 $0.6006
  • 1,000 $0.5431
$0.5431 / $0.6708 Buy Now
Bristol Electronics   5570
RFQ
Bristol Electronics   1209
RFQ
Quest Components   967
  • 1 $3.1320
  • 121 $1.9314
  • 519 $1.7226
$1.7226 / $3.1320 Buy Now
Rochester Electronics IPD60R600 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 9945
  • 1 $0.6708
  • 25 $0.6574
  • 100 $0.6306
  • 500 $0.6037
  • 1,000 $0.5702
$0.5702 / $0.6708 Buy Now

CAD Models for IPD60R600CP by Infineon Technologies AG
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Part Data Attributes for IPD60R600CP by Infineon Technologies AG

IPD60R600CP
Infineon Technologies AG
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-252AA
Package Description
GREEN, PLASTIC, TO-252, 3 PIN
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
144 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
6.1 A
Drain-source On Resistance-Max
0.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
60 W
Pulsed Drain Current-Max (IDM)
15 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPD60R600CP
    Infineon Technologies AG
    Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
    VS

Alternate Parts for IPD60R600CP

This table gives cross-reference parts and alternative options found for IPD60R600CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R600CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPD60R600CPATMA1 Power Field-Effect Transistor, Infineon Technologies AG IPD60R600CP vs IPD60R600CPATMA1
Part Number Description Manufacturer Compare
IPD60R600CPATMA1 Power Field-Effect Transistor, Infineon Technologies AG IPD60R600CP vs IPD60R600CPATMA1

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