There are no models available for this part yet.
Overview of IPB90N04S402ATMA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPB90N04S402ATMA1 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
448-IPB90N04S402ATMA1CT-ND
|
DigiKey | MOSFET N-CH 40V 90A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
995 In Stock |
|
$1.3618 / $3.8800 | Buy Now | |
DISTI #
IPB90N04S402ATMA1
|
Avnet Americas | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB90N04S402ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | ||
DISTI #
SP000646182
|
EBV Elektronik | (Alt: SP000646182) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for IPB90N04S402ATMA1 by Infineon Technologies AG
Part Data Attributes for IPB90N04S402ATMA1 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Samacsys Manufacturer
|
Infineon
|
Avalanche Energy Rating (Eas)
|
475 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
40 V
|
Drain Current-Max (ID)
|
90 A
|
Drain-source On Resistance-Max
|
0.0021 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
360 A
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|
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