There are no models available for this part yet.
Overview of IPB80N08S4-06 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 1 replacement )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IPB80N08S4-06 by Infineon Technologies AG
Part Data Attributes for IPB80N08S4-06 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
270 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
80 V
|
Drain Current-Max (ID)
|
80 A
|
Drain-source On Resistance-Max
|
0.0055 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
150 pF
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
150 W
|
Pulsed Drain Current-Max (IDM)
|
320 A
|
Reference Standard
|
AEC-Q101
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IPB80N08S4-06
This table gives cross-reference parts and alternative options found for IPB80N08S4-06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N08S4-06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB80N08S406ATMA1 | Power Field-Effect Transistor, 80A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Infineon Technologies AG | IPB80N08S4-06 vs IPB80N08S406ATMA1 |