Part Details for IPB120N08S404ATMA1 by Infineon Technologies AG
Overview of IPB120N08S404ATMA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IPB120N08S404ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68AK5314
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Newark | Mosfet, N-Ch, 80V, 120A, To-263 Rohs Compliant: Yes |Infineon IPB120N08S404ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
448-IPB120N08S404ATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
994 In Stock |
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$1.7706 / $4.8600 | Buy Now |
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DISTI #
IPB120N08S404ATMA1
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Avnet Americas | MOSFET N-CHANNEL 75/80V - Tape and Reel (Alt: IPB120N08S404ATMA1) RoHS: Compliant Min Qty: 177 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 893 Partner Stock |
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$2.0700 | Buy Now |
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Rochester Electronics | IPB120N08 - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 893 |
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$1.7600 / $2.0700 | Buy Now |
Part Details for IPB120N08S404ATMA1
IPB120N08S404ATMA1 CAD Models
IPB120N08S404ATMA1 Part Data Attributes
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IPB120N08S404ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB120N08S404ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO263-3-2, 3/2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 179 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB120N08S404ATMA1
This table gives cross-reference parts and alternative options found for IPB120N08S404ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N08S404ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934066515127 | 120A, 80V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3 | NXP Semiconductors | IPB120N08S404ATMA1 vs 934066515127 |
| PSMN4R3-80BS | TRANSISTOR 120 A, 80 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IPB120N08S404ATMA1 vs PSMN4R3-80BS |
| IPI120N08S4-04 | Power Field-Effect Transistor | Infineon Technologies AG | IPB120N08S404ATMA1 vs IPI120N08S4-04 |
| BUK7E4R0-80E,127 | N-channel TrenchMOS standard level FET TO-262 3-Pin | NXP Semiconductors | IPB120N08S404ATMA1 vs BUK7E4R0-80E,127 |
| 934066523127 | 120A, 80V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IPB120N08S404ATMA1 vs 934066523127 |
| BUK954R4-80E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | IPB120N08S404ATMA1 vs BUK954R4-80E,127 |
| IRFS3207ZPBF-EL | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IPB120N08S404ATMA1 vs IRFS3207ZPBF-EL |
| IPP120N08S4-04 | Power Field-Effect Transistor | Infineon Technologies AG | IPB120N08S404ATMA1 vs IPP120N08S4-04 |