Part Details for IPB100N06S3L04ATMA1 by Infineon Technologies AG
Overview of IPB100N06S3L04ATMA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB100N06S3L04ATMA1
IPB100N06S3L04ATMA1 CAD Models
IPB100N06S3L04ATMA1 Part Data Attributes:
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IPB100N06S3L04ATMA1
Infineon Technologies AG
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IPB100N06S3L04ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0059 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB100N06S3L04ATMA1
This table gives cross-reference parts and alternative options found for IPB100N06S3L04ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N06S3L04ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPB100N06S2L-05 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N06S3L04ATMA1 vs SPB100N06S2L-05 |
| IPB100N06S2L05XT | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N06S3L04ATMA1 vs IPB100N06S2L05XT |
| IXFK110N06 | Power Field-Effect Transistor, 110A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IPB100N06S3L04ATMA1 vs IXFK110N06 |
| IPB100N06S2L-05 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N06S3L04ATMA1 vs IPB100N06S2L-05 |
| 934067437115 | Power Field-Effect Transistor, 100A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | Nexperia | IPB100N06S3L04ATMA1 vs 934067437115 |
| IPB100N06S2L05ATMA1 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N06S3L04ATMA1 vs IPB100N06S2L05ATMA1 |
| STP100N6F7 | N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package | STMicroelectronics | IPB100N06S3L04ATMA1 vs STP100N6F7 |
| STL20N6F7 | N-channel 60 V, 0.0046 Ohm typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | STMicroelectronics | IPB100N06S3L04ATMA1 vs STL20N6F7 |
| PSMN5R2-60YLX | PSMN5R2-60YL - N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin | Nexperia | IPB100N06S3L04ATMA1 vs PSMN5R2-60YLX |