IPB072N15N3GXT
Infineon Technologies AG
Description: Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Overview of IPB072N15N3GXT by Infineon Technologies AG

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPB072N15N3GXT by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IPB072N15N3GATMA1
Avnet Americas Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB072N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 3000
RFQ

CAD Models for IPB072N15N3GXT by Infineon Technologies AG
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Part Data Attributes for IPB072N15N3GXT by Infineon Technologies AG

IPB072N15N3GXT
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
18 Weeks
Avalanche Energy Rating (Eas)
780 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
100 A
Drain-source On Resistance-Max
0.0072 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IPB072N15N3GXT
    Infineon Technologies AG
    Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
    VS

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