Part Details for IPB072N15N3GATMA1 by Infineon Technologies AG
Overview of IPB072N15N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPB072N15N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
60R2666
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Newark | Mosfet, N Channel, 150V, 100A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB072N15N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2052 |
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$3.5300 | Buy Now |
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DISTI #
86AK5161
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Newark | Mosfet, N-Ch, 150V, 100A, To-263 Rohs Compliant: Yes |Infineon IPB072N15N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$3.1100 / $3.2200 | Buy Now |
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DISTI #
IPB072N15N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 100A TO263-3 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1838 In Stock |
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$2.7146 / $5.4800 | Buy Now |
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DISTI #
IPB072N15N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB072N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 3000 |
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RFQ | |
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DISTI #
IPB072N15N3GATMA1
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Avnet Americas | Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB072N15N3GATMA1) RoHS: Compliant Min Qty: 125 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 14700 Partner Stock |
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$2.4900 / $2.9300 | Buy Now |
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DISTI #
60R2666
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Avnet Americas | Power MOSFET, N Channel, 150 V, 100 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount - Bulk (Alt: 60R2666) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Bulk | 2052 Partner Stock |
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$3.5300 / $5.3900 | Buy Now |
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DISTI #
726-IPB072N15N3GATMA
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Mouser Electronics | MOSFETs N-Ch 150V 100A D2PAK-2 OptiMOS 3 RoHS: Compliant | 3060 |
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$2.5100 / $4.9400 | Buy Now |
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Future Electronics | Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 3000Reel |
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$2.4500 | Buy Now |
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Future Electronics | Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$2.4500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 150V, 0.0072OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 63 |
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$3.6000 / $5.4000 | Buy Now |
Part Details for IPB072N15N3GATMA1
IPB072N15N3GATMA1 CAD Models
IPB072N15N3GATMA1 Part Data Attributes
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IPB072N15N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB072N15N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 780 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB072N15N3GATMA1
This table gives cross-reference parts and alternative options found for IPB072N15N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB072N15N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB072N15N3GXT | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB072N15N3GATMA1 vs IPB072N15N3GXT |