Part Details for IPA60R600E6 by Infineon Technologies AG
Overview of IPA60R600E6 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IPA60R600E6
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPA60R600E6
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Mouser Electronics | MOSFETs N-Ch 650V 7.3A TO220FP-3 CoolMOS E6 RoHS: Compliant | 0 |
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Order Now | |
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CHIPMALL.COM LIMITED | 600V, 0.6OHM, N-CHANNEL, MOSFET | 627 |
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$0.5508 | Buy Now |
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Wuhan P&S | 600V,600m��,7.3A,N-Channel Power MOSFET Min Qty: 1 | 47 |
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$0.6900 / $0.9600 | Buy Now |
Part Details for IPA60R600E6
IPA60R600E6 CAD Models
IPA60R600E6 Part Data Attributes
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IPA60R600E6
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA60R600E6
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 133 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7.3 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |