Datasheets
IKW40N120H3XK by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IKW40N120H3XK by Infineon Technologies AG

Overview of IKW40N120H3XK by Infineon Technologies AG

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Price & Stock for IKW40N120H3XK

Part # Distributor Description Stock Price Buy
DISTI # IKW40N120H3FKSA1
Avnet Americas Trans IGBT Chip N-CH 400V 3-Pin(3+Tab) TO-247 T/R - Rail/Tube (Alt: IKW40N120H3FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 19 Weeks, 0 Days Container: Tube 0
RFQ

Part Details for IKW40N120H3XK

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IKW40N120H3XK Part Data Attributes

IKW40N120H3XK Infineon Technologies AG
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IKW40N120H3XK Infineon Technologies AG Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 414 ns
Turn-on Time-Nom (ton) 78 ns

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