Part Details for HYI25D512800CE-6 by Qimonda AG
Overview of HYI25D512800CE-6 by Qimonda AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HYI25D512800CE-6
HYI25D512800CE-6 CAD Models
HYI25D512800CE-6 Part Data Attributes
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HYI25D512800CE-6
Qimonda AG
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Datasheet
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HYI25D512800CE-6
Qimonda AG
DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.0046 A | |
| Supply Current-Max | 0.205 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYI25D512800CE-6
This table gives cross-reference parts and alternative options found for HYI25D512800CE-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYI25D512800CE-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V64M8STG-75Z:G | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | HYI25D512800CE-6 vs MT46V64M8STG-75Z:G |
| HY5DU12822DLT-D43 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | SK Hynix Inc | HYI25D512800CE-6 vs HY5DU12822DLT-D43 |
| MT46V64M8TG-6:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYI25D512800CE-6 vs MT46V64M8TG-6:F |
| K4H510838F-LCCC | DDR DRAM, 64MX8, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Electro-Mechanics | HYI25D512800CE-6 vs K4H510838F-LCCC |
| MT46V64M8P-5BL | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | HYI25D512800CE-6 vs MT46V64M8P-5BL |
| MT46V64M8TG-75ZLIT:D | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYI25D512800CE-6 vs MT46V64M8TG-75ZLIT:D |
| HYB25D512800AT-7 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | HYI25D512800CE-6 vs HYB25D512800AT-7 |
| MT46V32M8P-75EL:F | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 | Micron Technology Inc | HYI25D512800CE-6 vs MT46V32M8P-75EL:F |
| MT46V64M8TG-5BL:D | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYI25D512800CE-6 vs MT46V64M8TG-5BL:D |
| V58C2512804SDUI6H | DDR DRAM, 64MX8, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | HYI25D512800CE-6 vs V58C2512804SDUI6H |