Datasheets
HYI25D512160CC-6 by: Qimonda AG

DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, PLASTIC, TFBGA-60

Part Details for HYI25D512160CC-6 by Qimonda AG

Overview of HYI25D512160CC-6 by Qimonda AG

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Part Details for HYI25D512160CC-6

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HYI25D512160CC-6 Part Data Attributes

HYI25D512160CC-6 Qimonda AG
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HYI25D512160CC-6 Qimonda AG DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, PLASTIC, TFBGA-60
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer QIMONDA AG
Part Package Code BGA
Package Description TBGA, BGA60,9X12,40/32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
Length 12 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.0046 A
Supply Current-Max 0.23 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for HYI25D512160CC-6

This table gives cross-reference parts and alternative options found for HYI25D512160CC-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYI25D512160CC-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYI25D512160CF-6 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG HYI25D512160CC-6 vs HYI25D512160CF-6
Part Number Description Manufacturer Compare
NT5DS32M16BF-6K DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 0.80 X 1 MM PITCH, BGA-60 Nanya Technology Corporation HYI25D512160CC-6 vs NT5DS32M16BF-6K
MT47H32M16CB-25:B DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc HYI25D512160CC-6 vs MT47H32M16CB-25:B
K4H511638C-ZPB00 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor HYI25D512160CC-6 vs K4H511638C-ZPB00
K4H511638G-HCC00 DDR DRAM, 32MX16, 0.55ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor HYI25D512160CC-6 vs K4H511638G-HCC00
V58C2512164SDLJ75 DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc HYI25D512160CC-6 vs V58C2512164SDLJ75
MT46HC32M16LGBF-6IT:B DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc HYI25D512160CC-6 vs MT46HC32M16LGBF-6IT:B
MT46H32M16LGBF-75LIT:C DDR DRAM, 32MX16, CMOS, PBGA60, 9 X 8 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc HYI25D512160CC-6 vs MT46H32M16LGBF-75LIT:C
H5DU5162EFR-L2L DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc HYI25D512160CC-6 vs H5DU5162EFR-L2L
MT46H32M16LFBF-54LIT:C DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc HYI25D512160CC-6 vs MT46H32M16LFBF-54LIT:C
MT46H32M16LFCK-75IT DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc HYI25D512160CC-6 vs MT46H32M16LFCK-75IT

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