Memory
HYI18T1G160C2F-3S
Qimonda AG
Description: DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84

Overview of HYI18T1G160C2F-3S by Qimonda AG

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for HYI18T1G160C2F-3S by Qimonda AG

HYI18T1G160C2F-3S
Qimonda AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
QIMONDA AG
Part Package Code
BGA
Package Description
TFBGA, BGA84,9X15,32
Pin Count
84
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.45 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
Length
12.5 mm
Memory Density
1073741824 bit
Memory IC Type
DDR2 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
84
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
64MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
Standby Current-Max
0.013 A
Supply Current-Max
0.306 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
Want to compare parts?
  1. HYI18T1G160C2F-3S
    Qimonda AG
    DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84
    VS

Alternate Parts for HYI18T1G160C2F-3S

This table gives cross-reference parts and alternative options found for HYI18T1G160C2F-3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYI18T1G160C2F-3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HYB18T1G160C2C-3S DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG HYI18T1G160C2F-3S vs HYB18T1G160C2C-3S
HYB18T1G160C2C-3 DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG HYI18T1G160C2F-3S vs HYB18T1G160C2C-3
HYI18T1G160C2C-3S DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG HYI18T1G160C2F-3S vs HYI18T1G160C2C-3S
M14D1G1664A-3BG2D DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84 Elite Semiconductor Memory Technology Inc HYI18T1G160C2F-3S vs M14D1G1664A-3BG2D
Part Number Description Manufacturer Compare
H5PS1G63EFR-S6L DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 SK Hynix Inc HYI18T1G160C2F-3S vs H5PS1G63EFR-S6L
HY5PS1G1631CFR-S6I DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc HYI18T1G160C2F-3S vs HY5PS1G1631CFR-S6I
HYB18T1G160C2C-3S DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG HYI18T1G160C2F-3S vs HYB18T1G160C2C-3S
MT47H64M16HR-3IT:HTR DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYI18T1G160C2F-3S vs MT47H64M16HR-3IT:HTR
MT47H64M16HW-3AIT:H DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, FBGA-84 Micron Technology Inc HYI18T1G160C2F-3S vs MT47H64M16HW-3AIT:H
H5PS1G63EFR-S6J DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 SK Hynix Inc HYI18T1G160C2F-3S vs H5PS1G63EFR-S6J
MT47H64M16HW-3IT:H DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc HYI18T1G160C2F-3S vs MT47H64M16HW-3IT:H
K4T1G164QQ-HIE60 DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor HYI18T1G160C2F-3S vs K4T1G164QQ-HIE60
HY5PS1G1631CFP-C4 DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc HYI18T1G160C2F-3S vs HY5PS1G1631CFP-C4
MT47H64M16HR-37E:H DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYI18T1G160C2F-3S vs MT47H64M16HR-37E:H

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