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HYI0UGG0MF1-6SS0E by: SK Hynix Inc

Memory Circuit,

Part Details for HYI0UGG0MF1-6SS0E by SK Hynix Inc

Overview of HYI0UGG0MF1-6SS0E by SK Hynix Inc

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Telecommunications Automotive Consumer Electronics Education and Research Security and Surveillance Computing and Data Storage Aerospace and Defense Healthcare Robotics and Drones

Part Details for HYI0UGG0MF1-6SS0E

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HYI0UGG0MF1-6SS0E Part Data Attributes:

HYI0UGG0MF1-6SS0E SK Hynix Inc
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HYI0UGG0MF1-6SS0E SK Hynix Inc Memory Circuit,
Part Life Cycle Code Active
Ihs Manufacturer SK HYNIX INC
Package Description LFBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.71
Additional Feature NAND FLASH IS ORGANISED AS 128M X 8
JESD-30 Code R-PBGA-B149
Length 14 mm
Memory Density 536870912 bit
Memory IC Type MEMORY CIRCUIT
Memory Width 16
Number of Functions 1
Number of Terminals 149
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -30 °C
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Seated Height-Max 1.4 mm
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 10 mm

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