Part Details for HYB39S512400ATL-7.5 by Infineon Technologies AG
Overview of HYB39S512400ATL-7.5 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HYB39S512400ATL-7.5
HYB39S512400ATL-7.5 CAD Models
HYB39S512400ATL-7.5 Part Data Attributes
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HYB39S512400ATL-7.5
Infineon Technologies AG
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Datasheet
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HYB39S512400ATL-7.5
Infineon Technologies AG
Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB39S512400ATL-7.5
This table gives cross-reference parts and alternative options found for HYB39S512400ATL-7.5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S512400ATL-7.5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DPSD128MX4WNY5-DP-XX08 | Synchronous DRAM Module, 128MX4, CMOS, PDSO54, STACKED, TSOP2-54 | B&B Electronics Manufacturing Company | HYB39S512400ATL-7.5 vs DPSD128MX4WNY5-DP-XX08 |
| K4H510438B-NLA2 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | HYB39S512400ATL-7.5 vs K4H510438B-NLA2 |
| MT48LC128M4SP-75:D | 128MX4 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | HYB39S512400ATL-7.5 vs MT48LC128M4SP-75:D |
| HY57V12420T-P | Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HYB39S512400ATL-7.5 vs HY57V12420T-P |
| M2V12S20TP-6 | Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 | Mitsubishi Electric | HYB39S512400ATL-7.5 vs M2V12S20TP-6 |
| HM5257405BTD-A6 | Synchronous DRAM, 128MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Elpida Memory Inc | HYB39S512400ATL-7.5 vs HM5257405BTD-A6 |
| K4S510632D-TC7C | Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HYB39S512400ATL-7.5 vs K4S510632D-TC7C |
| DPSD128MX4WY5-DP-XXPI2 | Synchronous DRAM Module, 128MX4, CMOS, PDMA54, STACK, TSOP-54 | B&B Electronics Manufacturing Company | HYB39S512400ATL-7.5 vs DPSD128MX4WY5-DP-XXPI2 |
| K4H510438B-VCA20 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, LEAD FREE, STSOP2-54 | Samsung Semiconductor | HYB39S512400ATL-7.5 vs K4H510438B-VCA20 |
| K4H510438B-NLB0 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | Samsung Semiconductor | HYB39S512400ATL-7.5 vs K4H510438B-NLB0 |