Datasheets
HYB3166160AT-50 by:

Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50

Part Details for HYB3166160AT-50 by Siemens

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Part Details for HYB3166160AT-50

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HYB3166160AT-50 Part Data Attributes

HYB3166160AT-50 Siemens
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HYB3166160AT-50 Siemens Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-G50
Memory Density 67108864 bit
Memory IC Type FAST PAGE DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 2048
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Position DUAL

Alternate Parts for HYB3166160AT-50

This table gives cross-reference parts and alternative options found for HYB3166160AT-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3166160AT-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4F641612B-TC500 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3166160AT-50 vs K4F641612B-TC500
HYB3164160AT-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50 Siemens HYB3166160AT-50 vs HYB3164160AT-50
K4F661612B-TC50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3166160AT-50 vs K4F661612B-TC50
VG26VS64160BT-5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HYB3166160AT-50 vs VG26VS64160BT-5
HYB3166160AT-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Infineon Technologies AG HYB3166160AT-50 vs HYB3166160AT-50
K4F661612C-TC500 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3166160AT-50 vs K4F661612C-TC500
M5M465160BTP-5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 Mitsubishi Electric HYB3166160AT-50 vs M5M465160BTP-5
VG26V65160BT-5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HYB3166160AT-50 vs VG26V65160BT-5
UPD4264160G5-A50-7JF Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics America Inc HYB3166160AT-50 vs UPD4264160G5-A50-7JF
K4F661612C-TC50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3166160AT-50 vs K4F661612C-TC50
Part Number Description Manufacturer Compare
HY51V65164TC-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc HYB3166160AT-50 vs HY51V65164TC-60
HYB3165160ATL-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Infineon Technologies AG HYB3166160AT-50 vs HYB3165160ATL-50
KM416V4104CT-L5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3166160AT-50 vs KM416V4104CT-L5
K4E641612C-TL500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3166160AT-50 vs K4E641612C-TL500
HM5164165LTT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd HYB3166160AT-50 vs HM5164165LTT-6
HY51V64164SLRC-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50 SK Hynix Inc HYB3166160AT-50 vs HY51V64164SLRC-50
V53C364165AT60L EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation HYB3166160AT-50 vs V53C364165AT60L
HY51V65160SLRC-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50 SK Hynix Inc HYB3166160AT-50 vs HY51V65160SLRC-50
MT4LC4M16K2TG-6TR Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc HYB3166160AT-50 vs MT4LC4M16K2TG-6TR
MT4LC4M16F5TG-5S Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc HYB3166160AT-50 vs MT4LC4M16F5TG-5S

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