Memory
HYB3165805BJ-50
Description: EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SO-32

Overview of HYB3165805BJ-50 by Siemens

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Where used in Applications: Automotive

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Part Data Attributes for HYB3165805BJ-50 by Siemens

HYB3165805BJ-50
Siemens
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SIEMENS A G
Part Package Code
SOIC
Package Description
,
Pin Count
32
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FAST PAGE WITH EDO
Access Time-Max
50 ns
JESD-30 Code
R-PDSO-J32
Memory Density
67108864 bit
Memory IC Type
EDO DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
32
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX8
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Qualification Status
Not Qualified
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
J BEND
Terminal Position
DUAL
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  1. HYB3165805BJ-50
    Siemens
    EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SO-32
    VS

Alternate Parts for HYB3165805BJ-50

This table gives cross-reference parts and alternative options found for HYB3165805BJ-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3165805BJ-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
KM48V8104J-L5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, PLASTIC, SOJ-32 Samsung Semiconductor HYB3165805BJ-50 vs KM48V8104J-L5
M5M467805BJ-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, SOJ-32 Mitsubishi Electric HYB3165805BJ-50 vs M5M467805BJ-5
K4E640812D-JI50 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor HYB3165805BJ-50 vs K4E640812D-JI50
KM48V8004AK-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor HYB3165805BJ-50 vs KM48V8004AK-5
HM5165805LJ-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd HYB3165805BJ-50 vs HM5165805LJ-5
HY51V64804AJC-50 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 SK Hynix Inc HYB3165805BJ-50 vs HY51V64804AJC-50
HM5165805FLJ-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd HYB3165805BJ-50 vs HM5165805FLJ-5
K4E660812D-JP50 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor HYB3165805BJ-50 vs K4E660812D-JP50
GM71V64803CJ-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 SK Hynix Inc HYB3165805BJ-50 vs GM71V64803CJ-5
KM48V8004CK-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Samsung Semiconductor HYB3165805BJ-50 vs KM48V8004CK-5
Part Number Description Manufacturer Compare
HYB3165805AJ-40 EDO DRAM, 8MX8, 40ns, CMOS, PDSO32 Siemens HYB3165805BJ-50 vs HYB3165805AJ-40
HM5165805FJ-6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd HYB3165805BJ-50 vs HM5165805FJ-6
HYB3164805BJ-50 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SO-32 Siemens HYB3165805BJ-50 vs HYB3164805BJ-50
HYB3165805BJ-60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SO-32 Siemens HYB3165805BJ-50 vs HYB3165805BJ-60
HYB3164805BJ-60 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SO-32 Siemens HYB3165805BJ-50 vs HYB3164805BJ-60
HM5164805LJ-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd HYB3165805BJ-50 vs HM5164805LJ-5
HM5165805FLJ-6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd HYB3165805BJ-50 vs HM5165805FLJ-6
TC5164805AJ-40 IC 8M X 8 EDO DRAM, 40 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-32, Dynamic RAM Toshiba America Electronic Components HYB3165805BJ-50 vs TC5164805AJ-40
HM5165805LJ-5 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Hitachi Ltd HYB3165805BJ-50 vs HM5165805LJ-5
KM48V8104J-L6 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, PLASTIC, SOJ-32 Samsung Semiconductor HYB3165805BJ-50 vs KM48V8104J-L6

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