Memory
HYB3164165BT-50
Description: EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Overview of HYB3164165BT-50 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Healthcare Renewable Energy Robotics and Drones

CAD Models for HYB3164165BT-50 by Infineon Technologies AG
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Part Data Attributes for HYB3164165BT-50 by Infineon Technologies AG

HYB3164165BT-50
Infineon Technologies AG
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TSOP2
Package Description
0.400 INCH, PLASTIC, TSOP2-50
Pin Count
50
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FAST PAGE WITH EDO
Access Time-Max
50 ns
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type
COMMON
JESD-30 Code
R-PDSO-G50
JESD-609 Code
e0
Length
20.95 mm
Memory Density
67108864 bit
Memory IC Type
EDO DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
50
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
4MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP50,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
NO
Standby Current-Max
0.001 A
Supply Current-Max
0.07 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. HYB3164165BT-50
    Infineon Technologies AG
    EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
    VS

Alternate Parts for HYB3164165BT-50

This table gives cross-reference parts and alternative options found for HYB3164165BT-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3164165BT-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
UPD4265165G5-A60 IC,DRAM,EDO,4MX16,CMOS,TSOP,50PIN,PLASTIC Renesas Electronics Corporation HYB3164165BT-50 vs UPD4265165G5-A60
K4F661611B-TC50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs K4F661611B-TC50
KM416V4000C-SL5 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs KM416V4000C-SL5
KM416V4104AS-7 EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs KM416V4104AS-7
K4E641611B-TC500 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs K4E641611B-TC500
K4F641612C-TL50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs K4F641612C-TL50
KM416V4004BS-45 EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs KM416V4004BS-45
K4F641612C-TL450 Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor HYB3164165BT-50 vs K4F641612C-TL450
M5M465165BTP-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP-50/44 Mitsubishi Electric HYB3164165BT-50 vs M5M465165BTP-6
HYB3166165AT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG HYB3164165BT-50 vs HYB3166165AT-40

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