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HYB3118160BST-50 by:

Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44

Part Details for HYB3118160BST-50 by Siemens

Overview of HYB3118160BST-50 by Siemens

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Applications Consumer Electronics Education and Research Computing and Data Storage

Part Details for HYB3118160BST-50

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HYB3118160BST-50 Part Data Attributes

HYB3118160BST-50 Siemens
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HYB3118160BST-50 Siemens Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-G44
Memory Density 16777216 bit
Memory IC Type FAST PAGE DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 44
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 1024
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Position DUAL

Alternate Parts for HYB3118160BST-50

This table gives cross-reference parts and alternative options found for HYB3118160BST-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3118160BST-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UPD42S18165LG5-A50-7JF EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group HYB3118160BST-50 vs UPD42S18165LG5-A50-7JF
HM51W18160TT-5 Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 Hitachi Ltd HYB3118160BST-50 vs HM51W18160TT-5
MT4LC1M16E5TG-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP-50/44 Micron Technology Inc HYB3118160BST-50 vs MT4LC1M16E5TG-5
KM416V1004CT-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 Samsung Semiconductor HYB3118160BST-50 vs KM416V1004CT-5
V53C316165AT50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 Mosel Vitelic Corporation HYB3118160BST-50 vs V53C316165AT50
KM416V1204CT-L5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 Samsung Semiconductor HYB3118160BST-50 vs KM416V1204CT-L5
M5M4V18160CTP-5 Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 Mitsubishi Electric HYB3118160BST-50 vs M5M4V18160CTP-5
GM71VS16163CLT-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, LG Semicon Co Ltd HYB3118160BST-50 vs GM71VS16163CLT-5
TMS428169AP-50DGE 1MX16 EDO DRAM, 50ns, PDSO44, PLASTIC, TSOP-50/44 Texas Instruments HYB3118160BST-50 vs TMS428169AP-50DGE
MSM51V18160DSL-50TS-K Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 OKI Electric Industry Co Ltd HYB3118160BST-50 vs MSM51V18160DSL-50TS-K

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