Part Details for HYB25D256160CE-7F by Infineon Technologies AG
Overview of HYB25D256160CE-7F by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HYB25D256160CE-7F
HYB25D256160CE-7F CAD Models
HYB25D256160CE-7F Part Data Attributes
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HYB25D256160CE-7F
Infineon Technologies AG
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Datasheet
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HYB25D256160CE-7F
Infineon Technologies AG
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HYB25D256160CE-7F
This table gives cross-reference parts and alternative options found for HYB25D256160CE-7F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB25D256160CE-7F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V16M16TG-75LITH | 16MX16 DDR DRAM, 0.75ns, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYB25D256160CE-7F vs MT46V16M16TG-75LITH |
| IS43R16160-75TL | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP2-66 | Integrated Silicon Solution Inc | HYB25D256160CE-7F vs IS43R16160-75TL |
| MT46V16M16TG-75ZITH | 16MX16 DDR DRAM, 0.75ns, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYB25D256160CE-7F vs MT46V16M16TG-75ZITH |
| V58C2256164SAT7 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | HYB25D256160CE-7F vs V58C2256164SAT7 |
| K4H561638D-TCA20 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | HYB25D256160CE-7F vs K4H561638D-TCA20 |
| V58C2256164SALN-7 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | HYB25D256160CE-7F vs V58C2256164SALN-7 |
| V58C2256164SAT75 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | HYB25D256160CE-7F vs V58C2256164SAT75 |
| MT46V16M16P-75LHIT | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYB25D256160CE-7F vs MT46V16M16P-75LHIT |
| MT46V16M16D1TG-75Z | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 | Micron Technology Inc | HYB25D256160CE-7F vs MT46V16M16D1TG-75Z |
| V58C2256164SALI-7 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | HYB25D256160CE-7F vs V58C2256164SALI-7 |