Part Details for HYB18T512800AF-3S by Qimonda AG
Overview of HYB18T512800AF-3S by Qimonda AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HYB18T512800AF-3S
| Part # | Distributor | Description | Stock | Price | Buy | |
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Onlinecomponents.com | DRAM Chip DDR2 SDRAM 512Mbit 64Mx8 1.8V 60-Pin TFBGA |
7 In Stock |
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$21.7600 / $39.6300 | Buy Now |
Part Details for HYB18T512800AF-3S
HYB18T512800AF-3S CAD Models
HYB18T512800AF-3S Part Data Attributes
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HYB18T512800AF-3S
Qimonda AG
Buy Now
Datasheet
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HYB18T512800AF-3S
Qimonda AG
DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 10.5 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.0055 A | |
| Supply Current-Max | 0.147 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for HYB18T512800AF-3S
This table gives cross-reference parts and alternative options found for HYB18T512800AF-3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T512800AF-3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT47H64M8GB-25EL:B | Micron Technology Inc | Check for Price | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 | HYB18T512800AF-3S vs MT47H64M8GB-25EL:B |
| HY5DU12822DF-D43I | SK Hynix Inc | Check for Price | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, FBGA-60 | HYB18T512800AF-3S vs HY5DU12822DF-D43I |
| V59C1512804QDUP37I | ProMOS Technologies Inc | Check for Price | DDR DRAM, 64MX8, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | HYB18T512800AF-3S vs V59C1512804QDUP37I |
| K4H510838B-ZLB30 | Samsung Semiconductor | Check for Price | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | HYB18T512800AF-3S vs K4H510838B-ZLB30 |
| MT47H64M8B6-37EAT:D | Micron Technology Inc | Check for Price | DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 | HYB18T512800AF-3S vs MT47H64M8B6-37EAT:D |
| V59C1512804QCLF3 | ProMOS Technologies Inc | Check for Price | 64MX8 DDR DRAM, 0.45ns, PBGA60, ROHS COMPLIANT, MO-207, FBGA-60 | HYB18T512800AF-3S vs V59C1512804QCLF3 |
| HY5PS12821CFP-E3 | SK Hynix Inc | Check for Price | DDR DRAM, 64MX8, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | HYB18T512800AF-3S vs HY5PS12821CFP-E3 |
| V58C2512804SDLJ36I | ProMOS Technologies Inc | Check for Price | DDR DRAM, 64MX8, CMOS, PBGA60, GREEN, MO-207, FBGA-60 | HYB18T512800AF-3S vs V58C2512804SDLJ36I |
| MT46V64M8FN-6LIT:D | Micron Technology Inc | Check for Price | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | HYB18T512800AF-3S vs MT46V64M8FN-6LIT:D |
| HY5DU12822CLFP-H | SK Hynix Inc | Check for Price | DDR DRAM, 64MX8, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | HYB18T512800AF-3S vs HY5DU12822CLFP-H |