Part Details for HYB18T256400AF-25F by Qimonda AG
Overview of HYB18T256400AF-25F by Qimonda AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
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Education and Research
Computing and Data Storage
Part Details for HYB18T256400AF-25F
HYB18T256400AF-25F CAD Models
HYB18T256400AF-25F Part Data Attributes
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HYB18T256400AF-25F
Qimonda AG
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Datasheet
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HYB18T256400AF-25F
Qimonda AG
DDR DRAM, 64MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | QIMONDA AG | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA60,9X11,32 | |
Pin Count | 60 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B60 | |
Length | 10.5 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 4 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 64MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA60,9X11,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.005 A | |
Supply Current-Max | 0.165 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 10 mm |
Alternate Parts for HYB18T256400AF-25F
This table gives cross-reference parts and alternative options found for HYB18T256400AF-25F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T256400AF-25F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT46V64M4BG-6T:G | DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | HYB18T256400AF-25F vs MT46V64M4BG-6T:G |
MT46V64M4FG-75ITH | 64MX4 DDR DRAM, 0.75ns, PBGA60, 14 X 8 MM, PLASTIC, FBGA-60 | Micron Technology Inc | HYB18T256400AF-25F vs MT46V64M4FG-75ITH |
HYB18T256400BC-3S | DDR DRAM, 64MX4, 0.45ns, CMOS, PBGA60, PLASTIC, TFBGA-60 | Qimonda AG | HYB18T256400AF-25F vs HYB18T256400BC-3S |
K4H560438E-ZLCC0 | DDR DRAM, 64MX4, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | Samsung Semiconductor | HYB18T256400AF-25F vs K4H560438E-ZLCC0 |
V54C3256404VBJ6 | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PBGA60, LEAD FREE, MO-210, FBGA-60 | ProMOS Technologies Inc | HYB18T256400AF-25F vs V54C3256404VBJ6 |
NT5DS64M4BF-5T | DDR DRAM, 64MX4, 0.65ns, CMOS, PBGA60, CSP-60 | Nanya Technology Corporation | HYB18T256400AF-25F vs NT5DS64M4BF-5T |
V58C2256404SGJ-4 | DDR DRAM, 64MX4, 0.65ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 | ProMOS Technologies Inc | HYB18T256400AF-25F vs V58C2256404SGJ-4 |
V58C2256404SALZ-6 | DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, M0-233, DIE-STACKED, FBGA-60 | ProMOS Technologies Inc | HYB18T256400AF-25F vs V58C2256404SALZ-6 |
MT46V64M4FG-75ZIT:C | DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60, 8 X 14 MM, PLASTIC, FBGA-60 | Micron Technology Inc | HYB18T256400AF-25F vs MT46V64M4FG-75ZIT:C |
MT46V64M4BG-75ZLIT:G | DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60 | Micron Technology Inc | HYB18T256400AF-25F vs MT46V64M4BG-75ZLIT:G |