Datasheets
HYB18T1G400C2F-25F by: Qimonda AG

DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60

Part Details for HYB18T1G400C2F-25F by Qimonda AG

Overview of HYB18T1G400C2F-25F by Qimonda AG

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Part Details for HYB18T1G400C2F-25F

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HYB18T1G400C2F-25F Part Data Attributes

HYB18T1G400C2F-25F Qimonda AG
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HYB18T1G400C2F-25F Qimonda AG DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer QIMONDA AG
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
Length 12.5 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Supply Current-Max 0.251 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for HYB18T1G400C2F-25F

This table gives cross-reference parts and alternative options found for HYB18T1G400C2F-25F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T1G400C2F-25F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYI18T1G400C2C-25F DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYI18T1G400C2C-25F
HYI18T1G400C2F-2.5 DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYI18T1G400C2F-2.5
HYB18T1G400C2C-25F DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYB18T1G400C2C-25F
HYB18T1G400C2F-2.5 DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYB18T1G400C2F-2.5
HYB18T1G400C4F-25F DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYB18T1G400C4F-25F
HYB18T1G400C2C-2.5 DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYB18T1G400C2C-2.5
HYB18T1G400C2FL-2.5 DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG HYB18T1G400C2F-25F vs HYB18T1G400C2FL-2.5
Part Number Description Manufacturer Compare
V59C1G01408QBUF25A DDR DRAM, 256MX4, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 ProMOS Technologies Inc HYB18T1G400C2F-25F vs V59C1G01408QBUF25A
MT47H256M4CF-25EL:H DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H256M4CF-25EL:H
MT47H128M4GB-25LAT:B DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H128M4GB-25LAT:B
MT47H256M4HV-25LIT:G DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H256M4HV-25LIT:G
V59C1G01408QBLJ5 DDR DRAM, 256MX4, CMOS, PBGA60, GREEN, FBGA-60 ProMOS Technologies Inc HYB18T1G400C2F-25F vs V59C1G01408QBLJ5
MT47H256M4HV-25AT:E DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H256M4HV-25AT:E
V59C1G01408QBLP19AH DDR DRAM, 256MX4, CMOS, PBGA60, GREEN, FBGA-60 ProMOS Technologies Inc HYB18T1G400C2F-25F vs V59C1G01408QBLP19AH
MT47H256M4HQ-3ELAT:G DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H256M4HQ-3ELAT:G
MT47H256M4HQ-3IT:E DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H256M4HQ-3IT:E
MT47H256M4HV-187EL:G DDR DRAM, 256MX4, 3.5ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 Micron Technology Inc HYB18T1G400C2F-25F vs MT47H256M4HV-187EL:G

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