Memory
HY5W26CF-PF
SK Hynix Inc
Description: Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

Overview of HY5W26CF-PF by SK Hynix Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Internet of Things (IoT) Computing and Data Storage

CAD Models for HY5W26CF-PF by SK Hynix Inc
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Part Data Attributes for HY5W26CF-PF by SK Hynix Inc

HY5W26CF-PF
SK Hynix Inc
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
BGA
Package Description
FBGA, BGA54,9X9,32
Pin Count
54
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
7 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
100 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B54
JESD-609 Code
e1
Length
10.5 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
-25 °C
Organization
8MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
FBGA
Package Equivalence Code
BGA54,9X9,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
4096
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.0005 A
Supply Current-Max
0.155 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
20
Width
8.3 mm
Want to compare parts?
  1. HY5W26CF-PF
    SK Hynix Inc
    Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
    VS

Alternate Parts for HY5W26CF-PF

This table gives cross-reference parts and alternative options found for HY5W26CF-PF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5W26CF-PF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4M28163LH-RL1H0 Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor HY5W26CF-PF vs K4M28163LH-RL1H0
IS42LS16800AL-10BL Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Integrated Silicon Solution Inc HY5W26CF-PF vs IS42LS16800AL-10BL
HY5W2A6CLF-SF Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc HY5W26CF-PF vs HY5W2A6CLF-SF
K4M28163LF-BS1H0 Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor HY5W26CF-PF vs K4M28163LF-BS1H0
K4M28163LH-RG1L0 Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor HY5W26CF-PF vs K4M28163LH-RG1L0
MT48V8M16LFBF-8XT Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 9 MM, LEAD FREE, FBGA-54 Micron Technology Inc HY5W26CF-PF vs MT48V8M16LFBF-8XT
V55C2128164VAC10 Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, FBGA-54 ProMOS Technologies Inc HY5W26CF-PF vs V55C2128164VAC10
K4M56163LG-RL1L0 Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor HY5W26CF-PF vs K4M56163LG-RL1L0
K4M56163LG-BL1H0 Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor HY5W26CF-PF vs K4M56163LG-BL1H0
K4S28163LD-RG1L Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor HY5W26CF-PF vs K4S28163LD-RG1L

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