Datasheets
HY5DU121622LT-K by: SK Hynix Inc

DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

Part Details for HY5DU121622LT-K by SK Hynix Inc

Overview of HY5DU121622LT-K by SK Hynix Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for HY5DU121622LT-K

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HY5DU121622LT-K Part Data Attributes

HY5DU121622LT-K SK Hynix Inc
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HY5DU121622LT-K SK Hynix Inc DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSOP2, TSSOP66,.46
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e6
Length 22.225 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.02 A
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HY5DU121622LT-K

This table gives cross-reference parts and alternative options found for HY5DU121622LT-K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY5DU121622LT-K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY5DU121622LT-H DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc HY5DU121622LT-K vs HY5DU121622LT-H
Part Number Description Manufacturer Compare
IS43R16320D-6BI DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-60 Integrated Silicon Solution Inc HY5DU121622LT-K vs IS43R16320D-6BI
MT46V32M16P-5BIT:C DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc HY5DU121622LT-K vs MT46V32M16P-5BIT:C
HYB25D512160BEL-6 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG HY5DU121622LT-K vs HYB25D512160BEL-6
IS43R16320B-5TL DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66 Integrated Silicon Solution Inc HY5DU121622LT-K vs IS43R16320B-5TL
MT46V32M16P-5B:J DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc HY5DU121622LT-K vs MT46V32M16P-5B:J
K4H511638C-UPB30 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor HY5DU121622LT-K vs K4H511638C-UPB30
HY5DU121622BTP-H DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 SK Hynix Inc HY5DU121622LT-K vs HY5DU121622BTP-H
MT46V32M16P-75ELIT:F DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc HY5DU121622LT-K vs MT46V32M16P-75ELIT:F
MT46V32M16TG-75L:F DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc HY5DU121622LT-K vs MT46V32M16TG-75L:F
MT46V32M16TG-6T:C DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc HY5DU121622LT-K vs MT46V32M16TG-6T:C

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