Part Details for HY57V658020TC-12 by SK Hynix Inc
Overview of HY57V658020TC-12 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for HY57V658020TC-12
HY57V658020TC-12 CAD Models
HY57V658020TC-12 Part Data Attributes
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HY57V658020TC-12
SK Hynix Inc
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Datasheet
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HY57V658020TC-12
SK Hynix Inc
Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 9 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 83 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.13 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HY57V658020TC-12
This table gives cross-reference parts and alternative options found for HY57V658020TC-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V658020TC-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY57V658020LTC-12 | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V658020TC-12 vs HY57V658020LTC-12 |
| IBM0325804PT3A-10 | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | HY57V658020TC-12 vs IBM0325804PT3A-10 |
| MB81164842A-67LFN | Synchronous DRAM, 8MX8, 60ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | HY57V658020TC-12 vs MB81164842A-67LFN |
| UPD4564841G5-A12-9JF | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Elpida Memory Inc | HY57V658020TC-12 vs UPD4564841G5-A12-9JF |
| MB81164842A-67FN | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | HY57V658020TC-12 vs MB81164842A-67FN |
| MB81164842E-67LFN | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | HY57V658020TC-12 vs MB81164842E-67LFN |
| IBM0325804CT3A-10 | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | HY57V658020TC-12 vs IBM0325804CT3A-10 |
| MD56V62800-10TA | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | OKI Electric Industry Co Ltd | HY57V658020TC-12 vs MD56V62800-10TA |
| UPD4564841G5-A12-9JF | 8MX8 SYNCHRONOUS DRAM, 9ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Renesas Electronics Corporation | HY57V658020TC-12 vs UPD4564841G5-A12-9JF |
| HY57V648020TC-12 | Synchronous DRAM, 8MX8, 9ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V658020TC-12 vs HY57V648020TC-12 |