Part Details for HY57V658020BTC-10S by SK Hynix Inc
Overview of HY57V658020BTC-10S by SK Hynix Inc
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for HY57V658020BTC-10S
HY57V658020BTC-10S CAD Models
HY57V658020BTC-10S Part Data Attributes
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HY57V658020BTC-10S
SK Hynix Inc
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Datasheet
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HY57V658020BTC-10S
SK Hynix Inc
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.18 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HY57V658020BTC-10S
This table gives cross-reference parts and alternative options found for HY57V658020BTC-10S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V658020BTC-10S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IBM0364804PT3B-360 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | HY57V658020BTC-10S vs IBM0364804PT3B-360 |
| MB81F64842B-10LFN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | HY57V658020BTC-10S vs MB81F64842B-10LFN |
| KM48S8030DT-GL00 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V658020BTC-10S vs KM48S8030DT-GL00 |
| MB81F64842B-103LFN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | HY57V658020BTC-10S vs MB81F64842B-103LFN |
| KM48S8030DT-F8 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V658020BTC-10S vs KM48S8030DT-F8 |
| MT48LC8M8A1TG-10 | Synchronous DRAM, 8MX8, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | HY57V658020BTC-10S vs MT48LC8M8A1TG-10 |
| VG36648041BT-10 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | HY57V658020BTC-10S vs VG36648041BT-10 |
| HY57V658020ATC-8 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | HY57V658020BTC-10S vs HY57V658020ATC-8 |
| K4S640832F-TL1H | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V658020BTC-10S vs K4S640832F-TL1H |
| UPD4564841G5-A10L-9JF | Synchronous DRAM, 8MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HY57V658020BTC-10S vs UPD4564841G5-A10L-9JF |