Part Details for HY57V651620BLTC-10SI by SK Hynix Inc
Overview of HY57V651620BLTC-10SI by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| LTC3310SIV#PBF | Analog Devices | 10A Low Vltg Synch Step-Dwn Si | |
| LTC3310SIV-1#TRMPBF | Analog Devices | 10A Low Vltg Synch Step-Dwn Si | |
| LTC3310SIV#TRMPBF | Analog Devices | 10A Low Vltg Synch Step-Dwn Si |
Part Details for HY57V651620BLTC-10SI
HY57V651620BLTC-10SI CAD Models
HY57V651620BLTC-10SI Part Data Attributes
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HY57V651620BLTC-10SI
SK Hynix Inc
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Datasheet
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HY57V651620BLTC-10SI
SK Hynix Inc
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HY57V651620BLTC-10SI
This table gives cross-reference parts and alternative options found for HY57V651620BLTC-10SI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V651620BLTC-10SI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KM416S4030DT-G/FH | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V651620BLTC-10SI vs KM416S4030DT-G/FH |
| K4S641632H-UC700 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | Samsung Semiconductor | HY57V651620BLTC-10SI vs K4S641632H-UC700 |
| UPD4564163G5-A80L-9JF | Synchronous DRAM, 4MX16, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | NEC Electronics Group | HY57V651620BLTC-10SI vs UPD4564163G5-A80L-9JF |
| HM5264165FLTT-A60 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | HY57V651620BLTC-10SI vs HM5264165FLTT-A60 |
| TC59S6416BFT-80 | IC 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | HY57V651620BLTC-10SI vs TC59S6416BFT-80 |
| K4S641632D-TC700 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V651620BLTC-10SI vs K4S641632D-TC700 |
| K4S641632E-TL1L | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V651620BLTC-10SI vs K4S641632E-TL1L |
| KM416S4031CT-G8 | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | Samsung Semiconductor | HY57V651620BLTC-10SI vs KM416S4031CT-G8 |
| IS42S16400L-7T | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | Integrated Silicon Solution Inc | HY57V651620BLTC-10SI vs IS42S16400L-7T |
| KM416S4030CT-FH | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | HY57V651620BLTC-10SI vs KM416S4030CT-FH |