Datasheets
HY57V56820CLT-S by: SK Hynix Inc

Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54

Part Details for HY57V56820CLT-S by SK Hynix Inc

Overview of HY57V56820CLT-S by SK Hynix Inc

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

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Part Details for HY57V56820CLT-S

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HY57V56820CLT-S Part Data Attributes

HY57V56820CLT-S SK Hynix Inc
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HY57V56820CLT-S SK Hynix Inc Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Length 22.238 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.194 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HY57V56820CLT-S

This table gives cross-reference parts and alternative options found for HY57V56820CLT-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V56820CLT-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V56820CLT-P Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc HY57V56820CLT-S vs HY57V56820CLT-P
Part Number Description Manufacturer Compare
HYB39S256800DEL-8 Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG HY57V56820CLT-S vs HYB39S256800DEL-8
V54C3256804VDLF8IPC Synchronous DRAM, 32MX8, 6ns, CMOS, PBGA60, ROHS COMPLIANT, MO-210, FBGA-60 ProMOS Technologies Inc HY57V56820CLT-S vs V54C3256804VDLF8IPC
KM48S32230AT-G/F8 Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Samsung Semiconductor HY57V56820CLT-S vs KM48S32230AT-G/F8
HY57V56820HLT-8 Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 SK Hynix Inc HY57V56820CLT-S vs HY57V56820HLT-8
K4S560832C-TL1H Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HY57V56820CLT-S vs K4S560832C-TL1H
HY57V56820CT-8 Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc HY57V56820CLT-S vs HY57V56820CT-8
V54C3256804VBS8PC Synchronous DRAM, 32MX8, 6ns, CMOS, PBGA60, SOC-60 Mosel Vitelic Corporation HY57V56820CLT-S vs V54C3256804VBS8PC
HYB39S256800T-8 Synchronous DRAM, 32MX8, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG HY57V56820CLT-S vs HYB39S256800T-8
K4S560832C-TL1L Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HY57V56820CLT-S vs K4S560832C-TL1L
UPD45256841G5-A80L-9JF Synchronous DRAM, 32MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics Group HY57V56820CLT-S vs UPD45256841G5-A80L-9JF

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