Datasheets
HY57V283220LTP-P by: SK Hynix Inc

Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86

Part Details for HY57V283220LTP-P by SK Hynix Inc

Overview of HY57V283220LTP-P by SK Hynix Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Part Details for HY57V283220LTP-P

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HY57V283220LTP-P Part Data Attributes

HY57V283220LTP-P SK Hynix Inc
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HY57V283220LTP-P SK Hynix Inc Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Part Package Code TSOP2
Package Description TSSOP, TSSOP86,.46,20
Pin Count 86
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e6
Length 22.238 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.194 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.13 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HY57V283220LTP-P

This table gives cross-reference parts and alternative options found for HY57V283220LTP-P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V283220LTP-P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4S283232E-TL1L Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor HY57V283220LTP-P vs K4S283232E-TL1L
HY57V283220LT-P Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc HY57V283220LTP-P vs HY57V283220LT-P
HY57V283220T-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc HY57V283220LTP-P vs HY57V283220T-S
HY57V283220TP-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc HY57V283220LTP-P vs HY57V283220TP-S
HY57V283220T-P Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc HY57V283220LTP-P vs HY57V283220T-P
HY57V283220LT-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc HY57V283220LTP-P vs HY57V283220LT-S
HY57V283220LTP-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc HY57V283220LTP-P vs HY57V283220LTP-S
Part Number Description Manufacturer Compare
IS42S32400D-7BI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Integrated Silicon Solution Inc HY57V283220LTP-P vs IS42S32400D-7BI
K4S283233E-SF600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor HY57V283220LTP-P vs K4S283233E-SF600
K4M283233H-HN750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor HY57V283220LTP-P vs K4M283233H-HN750
K4S283233E-HE600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor HY57V283220LTP-P vs K4S283233E-HE600
IS42RM32400F-75BLI Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc HY57V283220LTP-P vs IS42RM32400F-75BLI
HY5V22EMP-6 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc HY57V283220LTP-P vs HY5V22EMP-6
K4S283233E-FF750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor HY57V283220LTP-P vs K4S283233E-FF750
IS45S32400E-6BLA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc HY57V283220LTP-P vs IS45S32400E-6BLA1
HY5V22F-8 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc HY57V283220LTP-P vs HY5V22F-8
IS42S32400E-6BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc HY57V283220LTP-P vs IS42S32400E-6BLI

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