Part Details for HY57V161610CTC-10P by SK Hynix Inc
Overview of HY57V161610CTC-10P by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| AD5752RBREZ | Analog Devices | Dual 16Bit DAC 8 LSB INL + 10p | |
| AD5752RBREZ-REEL7 | Analog Devices | Dual 16Bit DAC 8 LSB INL + 10p | |
| LTC2634CMSE-HMI10#TRPBF | Analog Devices | 4x 12-/10-/8-B R2R DACs w/ 10p |
Part Details for HY57V161610CTC-10P
HY57V161610CTC-10P CAD Models
HY57V161610CTC-10P Part Data Attributes
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HY57V161610CTC-10P
SK Hynix Inc
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Datasheet
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HY57V161610CTC-10P
SK Hynix Inc
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e6 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HY57V161610CTC-10P
This table gives cross-reference parts and alternative options found for HY57V161610CTC-10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V161610CTC-10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VG3617161DT-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | HY57V161610CTC-10P vs VG3617161DT-8 |
| HY57V161610CTC-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | HY57V161610CTC-10P vs HY57V161610CTC-8 |
| HY57V161610DTC-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | HY57V161610CTC-10P vs HY57V161610DTC-8 |
| VG3617161BT-7 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | HY57V161610CTC-10P vs VG3617161BT-7 |
| VG3617161ET-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | HY57V161610CTC-10P vs VG3617161ET-8 |
| K4S161622H-TC800 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | HY57V161610CTC-10P vs K4S161622H-TC800 |
| MB81F161622B-75FN | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Semiconductor Limited | HY57V161610CTC-10P vs MB81F161622B-75FN |
| HYB39S16160CT-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50 | Siemens | HY57V161610CTC-10P vs HYB39S16160CT-8 |
| UPD4516161AG5-A10-9NF | Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | HY57V161610CTC-10P vs UPD4516161AG5-A10-9NF |
| AS4LC1M16S1-12TC | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Alliance Semiconductor Corporation | HY57V161610CTC-10P vs AS4LC1M16S1-12TC |